Description:

   It utilizes the latest processing techniques to achieve

   the high cell density and reduces the on-resistance with high repetitive avalanche

   rating. These features combine to make this design an extremely efficient

   and reliable device for use in power switching application and a wide

   variety of other applications.

Absolute max Rating:

 　Symbol

 Parameter

 Max.

 Units

 ID @ TC = 25°C

 Continuous Drain Current, VGS @ 10V

 200①

 A

 ID @ TC = 100°C

 Continuous Drain Current, VGS @ 10V

 135①

 IDM

 Pulsed Drain Current②

 750

 PD @TC = 25°C

 Power Dissipation③

 220

 W

 Linear Derating Factor

 1.5

 W/°C

 VDS

 Drain-Source Voltage

 40

 V

 VGS

 Gate-to-Source Voltage

 ± 24

 V

 EAS

 Single Pulse Avalanche Energy @ L=0.3mH

 912

 mJ

 IAS

 Avalanche Current @ L=0.3mH

 78

 A

 TJ  TSTG

 Operating Junction and Storage Temperature Range

 -55 to +175

 °C